Physics Electronic Devices

Semiconductor Electronics Previous Year Questions (JEE Main 2026)

Solved JEE Main 2026 previous year questions on Electronic Devices (semiconductor diodes, Zener diodes, p-n junctions) with clear step-by-step solutions.

3 min read Updated Jul 2026 #pyq#previous year questions#jee-main-2026

A curated set of JEE Main 2026 previous year questions from Electronic Devices, worked out step by step.

Solutions are AI-generated and pending review.

JEE Main 2026 · 4 Apr, Shift 2 Q695278420
Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R. **Assertion A:** A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically. **Reason R:** Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage. Choose the correct answer from the options given below.
Solution

Assertion A: In reverse bias, a p-n junction carries only a tiny reverse saturation current that stays almost constant with increasing reverse voltage. At the breakdown (critical) voltage, the current rises sharply. This is a correct description of diode behaviour.

$$\text{A is TRUE}$$

Reason R: The small reverse current is due to minority charge carriers (electrons in the p-region and holes in the n-region) drifting across the junction — not majority carriers. So the claim that only majority carriers flow below the critical voltage is wrong.

$$\text{R is FALSE}$$

Therefore A is true but R is false.

Answer: C

  1. A Both A and R are true and R is the correct explanation of A
  2. B Both A and R are true but R is NOT the correct explanation of A
  3. C A is true but R is false
  4. D A is false but R is true
JEE Main 2026 · 4 Apr, Shift 2
JEE Main 2026 · 4 Apr, Shift 2 Q695278421
A diode has Zener voltage of $10\ \text{V}$ and maximum power dissipation of $0.5\ \text{W}$, then the minimum resistance to be used in series with this diode for safety when it is connected to a $25\ \text{V}$ power supply is __________ $\Omega$.
Solution

Given: Zener voltage $V_Z = 10\ \text{V}$, maximum power $P_{\max} = 0.5\ \text{W}$, supply $V = 25\ \text{V}$.

Step 1 — Maximum permissible Zener current:

$$I_{\max} = \frac{P_{\max}}{V_Z} = \frac{0.5}{10} = 0.05\ \text{A}$$

Step 2 — Voltage dropped across the series resistor (Zener holds $10\ \text{V}$):

$$V_{R} = V - V_Z = 25 - 10 = 15\ \text{V}$$

Step 3 — Minimum series resistance so the current never exceeds $I_{\max}$:

$$R_{\min} = \frac{V_R}{I_{\max}} = \frac{15}{0.05} = 300\ \Omega$$

Answer: 300

JEE Main 2026 · 4 Apr, Shift 2
JEE Main 2026 · 5 Apr, Shift 2 Q691121495
In a semiconductor p-n diode, the doping concentrations on the p-side and n-side are $10^{15}$ atoms/cm$^3$ and $10^{18}$ atoms/cm$^3$, respectively. Which one of the following statements is true?
Solution

Charge-neutrality condition: The total ionized charge exposed on each side of the junction must be equal in magnitude:

$$N_A \, W_p = N_D \, W_n$$

where $W_p$ and $W_n$ are the depletion widths on the p- and n-sides.

Step 1 — Rearrange for the ratio of widths:

$$\frac{W_p}{W_n} = \frac{N_D}{N_A} = \frac{10^{18}}{10^{15}} = 10^{3}$$

Step 2 — Interpret: Since $N_A \ll N_D$, the p-side is lightly doped, so the depletion region must extend much farther into the p-side to expose an equal amount of charge.

$$W_p = 1000\, W_n \;\Rightarrow\; \text{depletion region is wider on the p-side.}$$

The depletion layer always penetrates deeper into the lightly doped side.

Answer: B

  1. A Widths of depletion region on either side of the interface are equal
  2. B The depletion region width is more on p-side compared to that in n-side
  3. C The depletion region width is more on n-side compared to that in p-side
  4. D No depletion region forms because of unequal doping concentrations on p and n-sides
JEE Main 2026 · 5 Apr, Shift 2